Speaker
Description
We present a parametric analysis and TCAD simulations of the radiation tolerance of compensated LGADs.
In such designs, the gain layer is engineered through compensation of acceptor and donor dopants.
As radiation progressively deactivates these dopants, the objective is to maintain the charge multiplication mechanism beyond the radiation tolerance of conventional LGAD technology, currently limited to $2\times10^{15}$ neutrons for 50 µm-thick sensors.
The conditions under which compensated LGADs may achieve improved radiation hardness with respect to conventional LGAD technology are presented.
Preliminary observations indicate that the donor removal rate exceeds that of the acceptor; if confirmed, compensated LGADs would need to be designed to operate initially under a high external bias, close to the single-event burnout limit.